Polycrystalline semiconductor layers and methods for forming the same

US8236603B1 · kind B1 · utility

Assignees

• Solexant Corporation · US
• Rochester Institute of Technology · US

Inventors

• Leslie G. Fritzemeier · Mendon, US
• Ryne P. Raffaelle · Honeoye Falls, US
• Christopher Leitz · Nashua, US

Key dates

• Filing date: Sep 4, 2009
• Grant date: Aug 7, 2012
• Expiry date: Dec 19, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/969

Abstract

A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.