Method and system for tilting a substrate during gas cluster ion beam processing
US8237136B2 · kind B2 · utility
30Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Oct 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.