Non-volatile memory device including phase-change material
US8237141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.