LED structure

US8237174B2 · kind B2 · utility

Assignee

• NATIONAL CENTRAL UNIVERSITY · TW

Inventors

• Peng Chen · Tangxia, CN
• Hsueh-Hsing Liu · Taipei, TW
• Jen-Inn Chyi · New Taipei, TW

Key dates

• Filing date: May 10, 2010
• Grant date: Aug 7, 2012
• Expiry date: Jan 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811

Abstract

The present invention discloses an LED structure, wherein an N-type current spreading layer is interposed between N-type semiconductor layers to uniformly distribute current flowing through the N-type semiconductor layer. The N-type current spreading layer includes at least three sub-layers stacked in a sequence of from a lower band gap to a higher band gap, wherein the sub-layer having the lower band gap is near the substrate, and the sub-layer having the higher band gap is near the light emitting layer. Each sub-layer of the N-type current spreading layer is expressed by a general formula InxAlyGa(1-x-y)N, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.