Capacitors integrated with metal gate formation
US8237209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate and a MIM capacitor over the substrate. The MIM capacitor includes a bottom plate, an insulating layer over the bottom plate, and a top plate over the insulating layer. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate and a metal-containing gate electrode free from polysilicon on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material and has a same thickness as the bottom plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.