Non-volatile memory device including metal-insulator transition material
US8237214B2 · kind B2 · utility
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Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Nov 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.