Nonvolatile semiconductor memory device and method of manufacturing the same
US8237218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Sep 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
Abstract
A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.