System comprising a semiconductor device and structure
US8237228B2 · kind B2 · utility
48Cited by
292References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.