Selective re-programming of analog memory cells
US8238157B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.