Patent · US Active

Epitaxial wafer and production method thereof

US8241421B2 · kind B2 · utility

0Cited by

6References

9Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Katsuhiko Nakai · Yamaguchi, JP
Timo Mueller · Burghausen, DE
Atsushi Ikari · Shunan, JP
Wilfried von Ammon · Burghausen, DE
Martin Weber · Borgo San Lazzaro, DE

Key dates

Filing date	Oct 1, 2010
Grant date	Aug 14, 2012
Priority date	—
Expiry date	Oct 1, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/12528
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.