Air gap fabricating method
US8241990B2 · kind B2 · utility
8Cited by
7References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/00
Abstract
An air gap fabricating method is provided. A patterned sacrificial layer is formed over a substrate, and the material of the patterned sacrificial layer includes a germanium-antimony-tellurium alloy. A dielectric layer is formed on the patterned sacrificial layer. A reactant is provided to react with the patterned sacrificial layer and the patterned sacrificial layer is removed to form a structure with an air gap disposed at the original position of the patterned sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.