Substrate stiffness method and resulting devices for layer transfer process
US8241996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Apr 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate. The method includes initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains attached to the donor substrate to maintain at least the suitable deflection characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.