Method of forming metal interconnection on thick polyimide film
US8242024B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Dec 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Many current micromachining devices are integrated with materials such as very thick layer of polyimide (10 to 100 um) to offer essential characteristics and properties for various applications; it is inherently difficult and complicated to provide reliable metal interconnections between different levels of the circuits. The present invention is generally related to a novel micromachining process and structure to form metal interconnections in integrated circuits or micromachining devices which are incorporated with thick polyimide films. More particularly, the embodiments of the current invention relates to formation of multi-step staircase structure with tapered angle on polyimide layer, which is therefore capable of offering superb and reliable step coverage for metallization among different levels of integrated circuits, and especially for very thick polyimide layer applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.