Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate
US8242029B2 · kind B2 · utility
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Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Sep 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.