Patent · US Active

Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them

US8242481B2 · kind B2 · utility

2Cited by

32References

7Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars Samuelson · Malmö, SE
Bjorn Jonas Ohlsson · Malmö, SE
Lars-Ake Ledebo · Lund, SE

Key dates

Filing date	Jan 18, 2012
Grant date	Aug 14, 2012
Priority date	—
Expiry date	Jan 18, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/932
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.