Lateral Schottky diode

US8242533B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Aug 6, 2009
• Grant date: Aug 14, 2012
• Expiry date: Jan 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

High- and low-side surface voltage sustaining regions are produced utilizing optimum surface variation lateral doping. Schottky junctions are formed by depositing metal (M) on an n-type region having the lowest potential, taking M as the anode AL or AH of the Schottky diode, and ohmic contact is formed at the portion having the highest potential, taken as the cathode KL or KH of the Schottky diode. The potentials refer to a reverse bias applied to the Schottky diode. Each voltage-sustaining region is isolated and can be divided into several sections with isolation region inserted between them. A Schottky diode is formed in each section and connected to each other in series. A lateral Schottky diode and an n-MOST can be formed within a single voltage-sustaining region. The source region and drain region are connected directly to the anode and cathode of the Schottky junction, respectively.