Method for forming isolation layer of semiconductor device
US8242574B2 · kind B2 · utility
3Cited by
0References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Oct 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an isolation layer of a semiconductor device includes forming a trench in a substrate, forming a high-density plasma (HDP) oxide layer filling a portion of the trench, forming a spin-on-dielectric (SOD) oxide layer having a certain height over the HDP oxide layer, performing a thermal treatment, and forming an enhanced high-aspect-ratio process (eHARP) oxide layer filling another portion of the trench over the SOD oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.