Redundant metal barrier structure for interconnect applications
US8242600B2 · kind B2 · utility
19Cited by
22References
19Claims
0Family size
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Key dates
| Filing date | May 19, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A redundant metal diffusion barrier is provided for an interconnect structure which improves the reliability and extendibility of the interconnect structure. The redundant metal diffusion barrier layer is located within an opening that is located within a dielectric material and it is between a diffusion barrier layer and a conductive material which are also present within the opening. The redundant diffusion barrier includes a single layered or multilayered structure comprising Ru and a Co-containing material including pure Co or a Co alloy including at least one of N, B and P.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.