Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
US8243514B2 · kind B2 · utility
20Cited by
3References
28Claims
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Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.