Non-volatile field programmable gate array
US8243527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2011 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1776
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a first metal-oxide-semiconductor (CMOS) device coupled to a bit line and a word line and a second CMOS device coupled to the first CMOS device. The second CMOS device is also coupled to a complementary bit line and a complementary word line. The first and second CMOS devices are complementary to one another. An output node is coupled between the first CMOS device and the second CMOS device. A method of programming a non-volatile field programmable gate array (NV-FPGA) includes coupling an information handling system to the FPGA, performing a block erase of a plurality of memory cells in the FPGA, verifying that the block erase is successful, programming an upper page of the FPGA, verifying that the upper page programming is successful, programming a lower page of the FPGA and verifying that the lower page programming is successful.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.