Inventor · Meridian, ID, US

Luan C. Tran

217Patents
27h-index
97Co-inventors
93Inventor score

Filing activity: Jul 1, 1994 → Feb 6, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7115525B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 455 Expired
US7045834B2 Memory cell arrays Electricity 437 Expired
US7279740B2 Band-engineered multi-gated non-volatile memory device with enhanced attributes Physics 127 Expired
US6844591B1 Method of forming DRAM access transistors Electricity 118 Expired
US7253118B2 Pitch reduced patterns relative to photolithography features Electricity 117 Expired
US6356500B1 Reduced power DRAM device and method Physics 114 Expired
US6545904B2 6F2 DRAM ARRAY, A DRAM ARRAY FORMED ON A SEMICONDUCTIVE SUBSTRATE, A METHOD OF FORMING MEMORY CELLS IN A 6F2 DRAM ARRAY AND A METHOD OF ISOLATING A SINGLE ROW OF MEMORY CELLS IN A 6F2 DRAM ARRAY Emerging Cross-Sectional Technologies 101 Expired
US7151040B2 Methods for increasing photo alignment margins Emerging Cross-Sectional Technologies 97 Expired
US6249460A Dynamic flash memory cells with ultrathin tunnel oxides Physics 89 Expired
US6734482B1 Trench buried bit line memory devices Electricity 72 Expired
US6456535B2 Dynamic flash memory cells with ultra thin tunnel oxides Physics 65 Expired
US8243527B2 Non-volatile field programmable gate array Electricity 55 Active
US6806137B2 Trench buried bit line memory devices and methods thereof Electricity 51 Expired
US7224020B2 Integrated circuit device having non-linear active area pillars Emerging Cross-Sectional Technologies 46 Expired
US7547640B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 42 Active
US6410948B1 Memory cell arrays comprising intersecting slanted portions Electricity 34 Expired
US7648919B2 Integrated circuit fabrication Emerging Cross-Sectional Technologies 33 Active
US6455362B1 Double LDD devices for improved dram refresh Electricity 33 Expired
US6756619B2 Semiconductor constructions Emerging Cross-Sectional Technologies 32 Expired
US7268054B2 Methods for increasing photo-alignment margins Emerging Cross-Sectional Technologies 32 Active
US7651951B2 Pitch reduced patterns relative to photolithography features Electricity 32 Active
US7361569B2 Methods for increasing photo-alignment margins Emerging Cross-Sectional Technologies 30 Active
US7153778B2 Methods of forming openings, and methods of forming container capacitors Emerging Cross-Sectional Technologies 30 Expired
US7687408B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 30 Active
US6720638B2 Semiconductor constructions, and methods of forming semiconductor constructions Electricity 29 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.