Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
US8247093B2 · kind B2 · utility
11Cited by
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22Claims
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Key dates
| Filing date | Dec 19, 2007 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jun 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.