Semiconductor device and manufacturing method thereof
US8247844B2 · kind B2 · utility
3Cited by
0References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jan 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
Abstract
An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.