Method of enhancing charge storage in an E2PROM cell
US8247862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2010 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Oct 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
Abstract
A method is provided for enhancing charge storage in an E2PROM cell structure that includes a read transistor having spaced apart source an drain diffusion regions formed in a semiconductor substrate to define a substrate channel region therebetween, a conductive charge storage element formed over the substrate channel region and separated therefrom by gate dielectric material, a conductive control gate that is separated from the charge storage element by intervening dielectric material, and a conductive heating element disposed in proximity to the charge storage element. The method comprises performing a programming operation that causes charge to be placed on the charge storage element and, during the programming operation, heating the heating element to a temperature such that heat is provided to the charge storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.