Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure
US8247865B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 5, 2006 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jun 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor structure has a substrate with a first main surface and a second main surface, the substrate comprising a gate electrode region, a channel region, wherein a conductive channel can be generated, and a gate electrode insulation between the gate electrode region and the channel region.Further, a field electrode region with a curved external surface is provided for increasing a breakdown voltage of the semiconductor structure, wherein the field electrode region has an extension in every direction in parallel to the first main surface, which is lower than a maximum extension in the one direction perpendicular to the second main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.