Method of driving reverse conducting semiconductor device, semiconductor device and power supply device
US8248116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Aug 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0045
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.