Patent · US Active

Semiconductor memory apparatus and probe test control circuit therefor

US8248874B2 · kind B2 · utility

1Cited by
5References
21Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 18, 2009
Grant dateAug 21, 2012
Priority date
Expiry dateNov 5, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/1202
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Disclosed probe test control circuit includes: a bank active circuit configured to generate a bank active signal in response to a bank address and bank-by-bank test control signals; and a mat active circuit configured to generate a mat-by-mat sub-wordline selection signal and provide the mat-by-mat sub-wordline selection signal to a selected memory bank, in response to a row address signal, a row address enable signal and a mat-by-mat test control signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.