Hybrid silicon wafer and method of producing the same
US8252422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.