Metal gate transistor and resistor and method for fabricating the same
US8252657B2 · kind B2 · utility
2Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2011 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Mar 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.