Method of heat treating silicon wafer
US8252700B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jan 21, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.