Semiconductor substrate, electrode forming method, and solar cell fabricating method
US8253011B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 2, 2007 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.