Methods and devices for high throughput crystal structure analysis by electron diffraction
US8253099B2 · kind B2 · utility
14Cited by
1References
13Claims
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Key dates
| Filing date | Nov 6, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Nov 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and device for electron diffraction tomography of a crystal sample, which employs scanning of the electron beam over a plurality of discrete locations of the sample, in combination with a beam scanning protocol as the beam converges at every discrete location (42, 43) of the sample (38) to obtain a series of electron diffraction patterns, use of template matching to determine crystal orientations and thickness maps to obtain a common intensity scaling factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.