Nonvolatile semiconductor memory device and manufacturing method thereof
US8253136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jun 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
A nonvolatile semiconductor memory device of the present invention includes a substrate (1), first wires (2), memory cells each including a resistance variable element (5) and a portion of a diode element (6), second wires (11) which respectively cross the first wires (2) to be perpendicular to the first wires (2) and each of which contains a remaining portion of the diode element (6), and upper wires (13) formed via an interlayer insulating layer (12), respectively, and the first wires (2) are connected to the upper wires (13) via first contacts (14), respectively, and the second wires (11) are connected to the upper wires (13) via second contacts (15), respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.