Strained channel dynamic random access memory devices
US8253181B2 · kind B2 · utility
2Cited by
53References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.