Semiconductor storage device and method for manufacturing the same
US8253188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Dec 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/40
Abstract
A semiconductor storage device includes a semiconductor substrate, a first insulator, a laminated insulator including a second insulator having fixed charges more than those of the first insulator, a single-layer insulator, memory cells between the semiconductor substrate and the first insulator, each memory cells separated from an adjacent memory cell by a cavity portion and including a tunnel insulator, a charge accumulation layer, an insulator, and a control gate electrode, a first selection gate transistor between the semiconductor substrate and the first insulator, a second selection gate transistor between the semiconductor substrate and the first insulator, between one memory cell and the first selection gate transistor, and in contact with the laminated insulator on a first side face on a memory cell side thereof, and a high-voltage peripheral circuit transistor between the semiconductor substrate and the first insulator, and in contact with the single-layer insulator on a side face thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.