Semiconductor device with strained channel and method of fabricating the same
US8253204B2 · kind B2 · utility
308Cited by
15References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Nov 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.