Method of using xenon ion beams to improve track width definition
US8256096B2 · kind B2 · utility
0Cited by
9References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | May 22, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.