Underlayers for EUV lithography
US8257910B1 · kind B1 · utility
29Cited by
2References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2009 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved while improving adhesion and reducing or eliminating pattern collapse issues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.