Handshake structure for improving layout density
US8258578B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact at least partially overlaps at least one of the protrusions in the gate. A metal layer is disposed on the insulating layer. The metal layer includes a first structure shifted to a first side of the gate. The first structure at least partially overlaps the contact such that the contact electrically couples the first structure to the gate through the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.