Semiconductor device and method of manufacturing the same
US8258589B2 · kind B2 · utility
1Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2011 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Feb 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A semiconductor device includes a gate stack structure. The gate stack structure includes an interfacial layer formed on a semiconductor substrate, a high-k dielectric formed on the interfacial layer, a silicide gate including a diffusive material and an impurity metal, and formed over the high-k dielectric, and a barrier metal with a barrier effect to the diffusive material, and formed between the high-k dielectric and the metal gate. The impurity metal has a barrier effect to the diffusive material so that the diffusive material in the silicide gate can be prevented from being introduced into the high-k dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.