Multilayer structures having memory elements with varied resistance of switching layers
US8259485B2 · kind B2 · utility
7Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Oct 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multilayer structure is provided that includes a base and a multilayer circuit disposed above the base. The multilayer circuit includes memory elements, each including a switching layer, and conductive lines leading from the base to the memory element. The total resistance of the switching layer of a memory element is varied based on the total resistance of conductive lines leading from the base to the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.