Nonvolatile semiconductor memory device generating different write pulses to vary resistances
US8259489B2 · kind B2 · utility
13Cited by
5References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 9, 2008 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to generate plural types of write pulses for varying the resistance of the variable resistor in three or more stages based on ternary or higher write data. A selection circuit is operative to select a write target memory cell from the memory cell array based on a write address and supply the write pulse generated from the pulse generator to the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.