β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
US8262796B2 · kind B2 · utility
5Cited by
16References
14Claims
0Family size
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Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.