Minimization of mask undercut on deep silicon etch
US8262920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C4F8, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.