Method of forming resist pattern
US8263322B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jun 17, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0048
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.