Method of forming patterns of semiconductor device
US8263487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2009 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.