Patent · US Active

Substrate with feedthrough and method for producing the same

US8263491B2 · kind B2 · utility

1Cited by

6References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Florian Binder · Traunstein, DE
Stephan Dertinger · Tokyo, JP
Barbara Hasler · Munich, DE
Alfred Martin · Munich, DE
Grit Sommer · Grafing, DE
Holger Torwesten · Neubiberg, DE

Key dates

Filing date	Oct 19, 2007
Grant date	Sep 11, 2012
Priority date	—
Expiry date	Mar 14, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/30107
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A substrate has at least one feedthrough with at least one channel from a first main surface of the substrate to a second main surface of the substrate. The at least one channel is closed off with a first material. The at least one closed-off channel is filled with an electrically conductive second material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.