Patent · US Active

Inverted metamorphic multijunction solar cells with back contacts

US8263856B2 · kind B2 · utility

12Cited by
36References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 7, 2009
Grant dateSep 11, 2012
Priority date
Expiry dateSep 9, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method of manufacturing a solar cell by providing a first substrate; depositing sequentially on the first substrate a plurality of semiconductor layers, the plurality of semiconductor layers comprising a first layer and a last layer in the direction of deposition; forming a backside contact layer on the last semiconductor layer; forming on the last semiconductor layer a back cathode contact isolated from at least a first portion of the backside contact layer, the first portion forming the anode contact; attaching a second substrate on the backside contact layer and removing the first substrate to expose the first semiconductor layer and to define a front surface and an opposite back surface of a solar cell; forming a front cathode contact on the front surface of the solar cell; etching a first trench through the plurality of semiconductor layers to define an active portion of the solar cell with a first mesa structure including the front cathode contact and the anode contact and being surrounded by the first trench, the first mesa having a first sidewall in the first trench and a lateral peripheral region beyond the sidewall, and forming in the lateral peripheral region an electr…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.