Hybrid orientation accumulation mode GAA CMOSFET

US8264042B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Deyuan Xiao · Shanghai, CN
• Xi Wang · Shanghai, CN
• Miao Zhang · Beijing, CN
• Jing Chen · Shanghai, CN
• Zhong Ying Xue · Hohhot, CN

Key dates

• Filing date: Feb 11, 2010
• Grant date: Sep 11, 2012
• Expiry date: Jun 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A hybrid orientation accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Si(110) and n-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device results in high carrier mobility. Meanwhile polysilicon gate depletion and short channel effects are prevented, and threshold voltage is increased.