Very low voltage reference circuit
US8264214B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2011 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A low-voltage reference circuit may have a pair of semiconductor devices. Each semiconductor device may have an n-type semiconductor region, an n+ region in the n-type semiconductor region, a metal gate, and a gate insulator interposed between the metal gate and the n-type semiconductor region through which carriers tunnel. The metal gate may have a work function matching that of p-type polysilicon. The gate insulator may have a thickness of less than about 25 angstroms. The metal gate may form a first terminal for the semiconductor device and the n+ region and n-type semiconductor region may form a second terminal for the semiconductor device. The second terminals may be coupled to ground. A biasing circuit may use the first terminals to supply different currents to the semiconductor devices and may provide a corresponding reference output voltage at a value that is less than one volt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.